JPH087627Y2 - プラズマ処理装置 - Google Patents
プラズマ処理装置Info
- Publication number
- JPH087627Y2 JPH087627Y2 JP1990052052U JP5205290U JPH087627Y2 JP H087627 Y2 JPH087627 Y2 JP H087627Y2 JP 1990052052 U JP1990052052 U JP 1990052052U JP 5205290 U JP5205290 U JP 5205290U JP H087627 Y2 JPH087627 Y2 JP H087627Y2
- Authority
- JP
- Japan
- Prior art keywords
- lower electrode
- exhaust
- vacuum container
- exhaust port
- reaction gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000006185 dispersion Substances 0.000 claims description 19
- 239000012495 reaction gas Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990052052U JPH087627Y2 (ja) | 1990-05-18 | 1990-05-18 | プラズマ処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990052052U JPH087627Y2 (ja) | 1990-05-18 | 1990-05-18 | プラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0410335U JPH0410335U (en]) | 1992-01-29 |
| JPH087627Y2 true JPH087627Y2 (ja) | 1996-03-04 |
Family
ID=31572030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990052052U Expired - Lifetime JPH087627Y2 (ja) | 1990-05-18 | 1990-05-18 | プラズマ処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH087627Y2 (en]) |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59144132A (ja) * | 1983-02-07 | 1984-08-18 | Hitachi Ltd | 反応装置 |
| JPS6129126A (ja) * | 1984-07-20 | 1986-02-10 | Hitachi Ltd | プラズマ処理方法 |
| JPS6350127U (en]) * | 1986-09-19 | 1988-04-05 | ||
| JPS6393114A (ja) * | 1986-10-08 | 1988-04-23 | Tokuda Seisakusho Ltd | ドライエツチング装置 |
| JPS63141318A (ja) * | 1986-12-04 | 1988-06-13 | Oki Electric Ind Co Ltd | 試料処理用ガス排気装置 |
| JPS63194335A (ja) * | 1987-02-09 | 1988-08-11 | Tokuda Seisakusho Ltd | プラズマ処理方法 |
| JPS63227021A (ja) * | 1987-03-17 | 1988-09-21 | Toshiba Corp | ドライエツチング装置 |
| JPH01189126A (ja) * | 1988-01-25 | 1989-07-28 | Tokyo Electron Ltd | エッチング装置 |
| JPH01258428A (ja) * | 1988-04-08 | 1989-10-16 | Nec Corp | 半導体製造装置 |
| JPH01283391A (ja) * | 1988-05-09 | 1989-11-14 | Tokyo Electron Ltd | エッチング装置 |
-
1990
- 1990-05-18 JP JP1990052052U patent/JPH087627Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0410335U (en]) | 1992-01-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5449410A (en) | Plasma processing apparatus | |
| US7686918B2 (en) | Magnetron plasma processing apparatus | |
| EP0165400B1 (en) | Apparatus for plasma etching | |
| CN100587904C (zh) | 反应腔室内衬及包含该内衬的反应腔室 | |
| TWM547181U (zh) | 利用二次電漿佈植的電漿蝕刻系統 | |
| JP4601104B2 (ja) | プラズマ処理装置 | |
| CN101145508B (zh) | 等离子加工装置和方法 | |
| JP2003519932A (ja) | 真空処理装置 | |
| EP0414859B1 (en) | Improved etch chamber with gas dispersing membrane | |
| KR100333237B1 (ko) | 플라즈마에칭챔버내에서오염물질을감소시키는장치및방법 | |
| TWI733401B (zh) | 具有開合法拉第元件的等離子體處理系統及其開合法拉第元件 | |
| JPH07106095A (ja) | プラズマ処理装置 | |
| JPH087627Y2 (ja) | プラズマ処理装置 | |
| JPH0129875B2 (en]) | ||
| CN100566847C (zh) | 进气喷嘴 | |
| JP2000306889A (ja) | ドライエッチング装置 | |
| JPH05152218A (ja) | 表面処理装置 | |
| JP2669168B2 (ja) | マイクロ波プラズマ処理装置 | |
| JP2014007087A (ja) | プラズマ処理装置およびプラズマ処理方法 | |
| JPH1032192A (ja) | プラズマ処理装置 | |
| KR100495711B1 (ko) | 샤워헤드가 구비되는 평판표시소자 제조장치의 공정챔버 | |
| JPH02228476A (ja) | プラズマプロセス装置 | |
| JP2792886B2 (ja) | 化学気相成長装置 | |
| CN222923231U (zh) | 化学气相沉积设备 | |
| US6551520B1 (en) | Exhausting method and means in a dry etching apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |